View IRG7IC20FD_8970599.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

e g n-channel c gc e gate collector emitter
absolute maximum ratings parameter max. units v ce s collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 16 i c @ t c = 100c continuous collector current 8.0 i cm pulse collector current, v ge = 15v 48 i lm clamped inductive load current, v ge = 20v 48 a i f @ t c = 25c diode continous forward current 16 i f @ t c = 100c diode continous forward current 8.0 i fm diode maximum forward current 36 v ge gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 33 w p d @ t c = 100c maximum power dissipation 13 t j operating junction and -55 to +150 t st g storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 3.8 c/w r ? jc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 5.1 r ? cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.50 CCC r ? ja thermal resistance, junction-to-ambient (typical socket mount) CCC 65 CCC
insulated gate bipolar transistor withultrafast soft recovery diode v ces = 600v i c = 8.0a, t c = 100c t sc > 3 s, t jmax = 150c v ce(on) typ. = 1.60v @ i c = 12a

! "
#$% form quantity IRG7IC20FDpbf to-220 fullpak tube 50 IRG7IC20FDpbf base part number package type standard pack orderable part number features benefits low v ce(on) high efficienct motor drive application zero v ce(on) temperature coefficient efficiency stable over temperature ultra fast soft recovery co-pak diode optimized trade-off between lo w losses and emi performance square rbsoa and 100% clamp il tested rugged hard switching operation 3 s short circuit capability enables short circuit protection sche me fully isolated fullpak package easy heatsink assembly lead-free, rohs compliant environmentally friendlier & !!!'' (& $ )
*+& downloaded from: http:///
!!!'' (& $ )
*+&
notes: v cc = 80% (v ces ), v ge = 20v, l = 585 h, r g = 47 ? . pulse width limited by max. junction temperature. r ?? is measured at t j of approximately 90c. maximum limits are based on statistical sample size characterization. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 500 a ? v (b r )ce s / ? t j temperature coeff. of breakdown voltage 0.54 v/c v ge = 0v, i c = 1.0ma (25c-150c) 1 . 4 0 i c = 6.0a, v ge = 15v, t j = 25c 1.60 1.85 i c = 12a, v ge = 15v, t j = 25c 1 . 2 0 i c = 6.0a, v ge = 15v, t j = 150c 1 . 6 0 i c = 12a, v ge = 15v, t j = 150c v ge (t h ) gate threshold voltage 4.5 7.0 v v ce = v ge , i c = 500 a ? v ge ( t h) / ? tj threshold voltage temp. coefficient -14 mv/c v ce = v ge , i c = 500 a (25c - 150c) gfe forward transconductance 12 s v ce = 50v, i c = 12a, pw = 20 s i ce s collector-to-emitter leakage current 1.0 25 av ge = 0v, v ce = 600v 430 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop 1.50 1.80 v i f = 12a 1 . 4 5 i f = 12a, t j = 150c i ge s gate-to-emitter leakage current 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 50 75 i c = 12a q ge gate-to-emitter charge (turn-on) 9.0 13.5 nc v ge = 15v q gc gate-to-collector charge (turn-on) 24 36 v cc = 400v e on turn-on switching loss 431 650 e off turn-off switching loss 481 702 j e total total switching loss 912 1352 i c = 12a, v cc = 400v, v ge = 15v t d(on) turn-on delay time 47 65 r g = 47 ? , l = 585 h, t j = 25c t r rise time 36 53 ns e nergy los s es include tail & diode revers e recovery t d(off) turn-off delay time 248 272 t f fall time 117 137 e on turn-on switching loss 555 e off turn-off switching loss 865 j e total total switching loss 1420 i c = 12a, v cc = 400v, v ge =15v t d(on) turn-on delay time 42 r g = 47 ? , l= 585 h, t j = 150c t r rise time 35 ns e nergy los s es include tail & diode revers e recovery t d(off) turn-off delay time 284 t f fall time 294 c ies input capacitance 1270 pf v ge = 0v c oes output capacitance 46 v cc = 30v c re s reverse transfer capacitance 36 f = 1.0mhz t j = 150c, i c = 48a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 47 ? , v ge = +20v to 0v scsoa short circuit safe operating area v ge = 15v, v cc = 400v, vp 600v rg = 47 ? , r shunt = 22m ??? t c = 100c erec reverse recovery energy of the diode 87 jt j = 150c t rr diode reverse recovery time 94 ns v cc = 400v, i f = 12a i rr peak reverse recovery current 14 a v ge = 15v, rg = 47 ? , l = 585 h conditions v v ce(on) collector-to-emitter saturation voltage 3 s downloaded from: http:///
!!!'' (& $ )
*+& ,
fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j ?? 150c, v ge =15v fig. 5 - reverse bias soa t j = 150c, v ge =20v 25 50 75 100 125 150 t c (c) 0 2 4 6 8 10 12 14 16 i c ( a ) 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 35 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 150c single pulse dc 0.1 1 10 100 f , frequency ( khz ) 0 2 4 6 8 10 12 14 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tcase = 100c gate drive as specified power dissipation = 13w i square wave: v cc diode as specified downloaded from: http:///
!!!'' (& $ )
*+& -
fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20 s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20 s fig. 8 - typ. igbt output characteristics t j = 150c; tp = 20 s fig. 9 - typ. diode forward characteristics tp = 20 s fig. 11 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = -40c 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f (v) 0 10 20 30 40 50 i f ( a ) -40c 25c 150c 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 6.0a i ce = 12a i ce = 24a 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 6.0a i ce = 12a i ce = 24a 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v downloaded from: http:///
!!!'' (& $ )
*+& .
fig. 12 - typical v ce vs. v ge t j = 150c fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20 s fig. 14 - typ. energy loss vs. i c t j = 150c l = 585 h; v ce = 400v, r g = 47 ? ; v ge = 15v fig. 15 - typ. switching time vs. i c t j = 150c l = 585 h; v ce = 400v, r g = 47 ? ; v ge = 15v fig. 16 - typ. energy loss vs. r g t j = 150c l = 585 h; v ce = 400v, i ce = 12a; v ge = 15v fig. 17 - typ. switching time vs. r g t j = 150c l = 585 h; v ce = 400v, i ce = 12a; v ge = 15v 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 6.0a i ce = 12a i ce = 24a 567891 01 11 2 v ge (v) 0 10 20 30 40 50 60 i c e ( a ) t j = 25c t j = 150c 0 5 10 15 20 25 i c (a) 0 200 400 600 800 1000 1200 1400 1600 e n e r g y ( j ) e off e on 0 5 10 15 20 25 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 rg ( ? ) 400 500 600 700 800 900 1000 1100 e n e r g y ( j ) e off e on 0 20 40 60 80 100 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on downloaded from: http:///
!!!'' (& $ )
*+& /
fig. 18 - typ. diode i rr vs. i f t j = 150c fig. 19 - typ. diode i rr vs. r g t j = 150c fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 12a; t j = 150c fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 150c fig. 22 - typ. diode e rr vs. i f t j = 150c 0 5 10 15 20 25 i f (a) 5 10 15 20 25 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 0 25 50 75 100 r g ( ?? 5 10 15 20 25 i r r ( a ) 200 300 400 500 600 700 800 900 1000 di f /dt (a/ s) 5 10 15 20 25 i r r ( a ) 200 400 600 800 1000 di f /dt (a/ s) 400 600 800 1000 1200 1400 q r r ( n c ) 10 ? 22 ? 100 ? 47 ? 6.0a 12a 24a 0 5 10 15 20 25 i f (a) 0 50 100 150 200 e n e r g y ( j ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? fig. 23 - typ. v ge vs. short circuit time v cc =400v, t c =25c 8 1 01 21 41 6 v ge (v) 4 6 8 10 12 14 16 t i m e ( s ) 20 40 60 80 100 120 140 c u r r e n t ( a ) t sc i sc downloaded from: http:///
!!!'' (& $ )
*+& *
fig 26. maximum transient thermal impedance, junction-to-case (igbt) fig. 27. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.44211 0.0003390.57277 0.001557 1.28684 0.087573 1.47827 2.0493 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.55732 0.0002141.45268 0.001273 1.54252 0.04198 1.81052 1.78060 fig. 25 - typical gate charge vs. v ge i ce = 12a 0 1 02 03 04 05 06 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 100 200 300 400 500 v ce (v) 1 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres downloaded from: http:///
!!!'' (& $ )
*+& 0
fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v dc 4x dut vcc downloaded from: http:///
!!!'' (& $ )
*+& 1
fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -5 0 5 10 15 20 25 -100 0 100 200 300 400 500 - 1- 0 . 500 . 511 . 5 i ce (a) v ce (v) time(s) 90% i ce 5% v ce 10% i ce eoff loss tf -5 0 5 10 15 20 25 -100 0 100 200 300 400 500 -3.0 -1.0 1.0 3.0 i ce (a) v ce (v) time (s) test current 90% test current 5% v ce 10% test current tr eon loss -50 0 50 100 150 200 250 -100 0 100 200 300 400 500 - 101234 ice (a) vce (v) time (s) vce ice -15 -10 -5 0 5 10 15 -1.5 -0.5 0.5 1.5 2.5 i f (a) time (s) peak i rr t rr q rr downloaded from: http:///
!!!'' (& $ )
*+& &
note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-220ab full-pak package outlinedimensions are shown in millimeters (inches) to-220ab full-pak part marking information

!"#$%&''#()*+*$%#,!'$"$!% $%-$.&"#'#&-/0##
1

to-220ab full-pak package is not recommended for surface mount application. downloaded from: http:///
!!!'' (& $ )
*+& &&
ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. qualification information ? moisture sensitivity level to220 fullpak not applicable qualification level industrial (per jedec jesd47f guidelines ) ?? comments: this part number(s) passed industrial qualification. irs consumer qualification level is granted by extension of the higher industrial level. rohs compliant yes downloaded from: http:///

▲Up To Search▲

Price & Availability of IRG7IC20FD

	To Download IRG7IC20FD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .